Semiconductor physics: band theory, PN junction
Engineering Physics · Engineering
Study notes
A Si PN junction has N_A = 10¹⁶ cm⁻³, N_D = 10¹⁵ cm⁻³. Find built-in potential at 300K. n_i = 1.5×10¹⁰ cm⁻³, V_T = 26 mV. V_bi = 0.026 × ln(10¹⁶×10¹⁵/(1.5×10¹⁰)²) = 0.026 × ln(4.44×10¹⁰) = 0.026 × 24.5 ≈ 0.64 V.
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